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600V 20.7A 0.190
APT20N60BC3 APT20N60SC3
Super Junction MOSFET
C OLMOS O
Power Semiconductors
TO-247
D3PAK
* Ultra low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
D G S
All Ratings: TC = 25C unless otherwise specified.
APT20N60BC3_SC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
600 20.7 62 20 30 208 1.67 -55 to 150 260 50 20 1
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 20.7A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy
7 7
Volts Watts W/C C V/ns Amps mJ
IAR EAR EAS
Single Pulse Avalanche Energy
690
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.16 0.05 0.19 25 250 100 2.1 3 3.9
(VGS = 10V, ID = 13.1A)
Ohms A nA Volts
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
050-7145 Rev D
4-2006
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20N60B_SC3
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 20.7A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 380V ID = 20.7A @ 25C RG = 3.6 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 20.7A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 400V VGS = 15V ID = 20.7A, RG = 5
MIN
TYP
MAX
UNIT
2440 860 50 90 13 45 10 5 65 5 180 120 320 135
MIN TYP MAX UNIT Amps Volts ns C V/ns pF
114
nC
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
20.7 62 1 500 11 6
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -20.7A)
1.2 800
Reverse Recovery Time (IS = -20.7A, dl S/dt = 100A/s, VR = 480V) Reverse Recovery Charge (IS = -20.7A, dl S/dt = 100A/s, VR = 480V) Peak Diode Recovery
dv/ dt 5
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.60 62
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.70
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 13.80mH, RG = 25, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID20.7A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f
0.60 0.50
0.9
0.7 0.40 0.30 0.20 0.10 0 0.5 Note:
PDM t1 t2
4-2006
0.3
050-7145 Rev D
JC
0.1 0.05 10-5 10-4 SINGLE PULSE
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
60 VGS =15 & 10V 50 40 30 20 10 0
APT20N60B_SC3
6.5V 6V
RC MODEL Junction temp. ( "C) 0.259 Power (watts) 0.341 Case temperature 0.135 0.00500
5.5V
5V 4.5V 4V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
60
ID, DRAIN CURRENT (AMPERES)
50 40 30 20 10 0
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
NORMALIZED TO = 10V @ 11.9A
1.30 1.20 1.10 1.00 0.90 0.80 VGS=10V
TJ = -55C TJ = +25C TJ = +125C 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
VGS=20V
0
25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
20
1.10
15
1.05
10
1.00
5
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
0 25
0.90
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
3.0 2.5 2.0 1.5 1.0 0.5 0 -50
I
D
= 11.9A = 10V
V
GS
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7145 Rev D
4-2006
Typical Performance Curves
62
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
APT20N60B_SC3
ID, DRAIN CURRENT (AMPERES)
10 5
100S
C, CAPACITANCE (pF)
Ciss 1,000 Coss 100
1 0.6
TC =+25C TJ =+150C SINGLE PULSE
1mS 10mS Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 10
IDR, REVERSE DRAIN CURRENT (AMPERES)
1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 20.7A
200 100
12 VDS= 120V 8 VDS= 300V VDS= 480V
TJ =+150C TJ =+25C 10
4
20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 90 80 td(off)
V = 400V
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 50
V
DD G
1
= 400V
R
= 5
40
T = 125C
J
L = 100H
td(on) and td(off) (ns)
70 60 50 40 30 20 10 0 0
tf
DD G
R
= 5
T = 125C
J
L = 100H
tr and tf (ns)
30
20
10 td(on) 15 20 25 30 35 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
tr
5
10
15 20 25 30 35 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 700
V I
DD
0
0
5
10
600
= 400V R = 5
= 400V
500
SWITCHING ENERGY (J)
T = 125C L = 100H
600
SWITCHING ENERGY (J)
D J
= 20.7A
Eoff
J
T = 125C L = 100H EON includes diode reverse recovery.
400 300 200
EON includes diode reverse recovery.
500 400 300 200 100 0
Eoff
Eon
4-2006
Eon 100 0
050-7145 Rev D
15 20 25 30 35 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT20N60B_SC3
10% td(on) tr 90% 5% 10%
Gate Voltage
TJ = 125 C
90% Gate Voltage
TJ = 125 C
td(off)
Collector Current
tf
90% 0 10% Switching Energy
Collector Voltage
5%
Collector Voltage
Collector Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF60B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7145 Rev D
4-2006
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)

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